Manufacture of semiconductor device
文献类型：专利
| 作者 | HAMADA HIROYOSHI; SHONO MASAYUKI |
| 发表日期 | 1992-06-15 |
| 专利号 | JP1992167489A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable a groove at a mainstay part to be flattened and prevent deterioration of an element by forming a ridge which exists within the element and limits distribution of light according to difference in refractive index by using two types of etchants with and without face orientation dependency in sequence. CONSTITUTION:A buffer layer 2, a clad layer 3, an activation layer 4, a clad layer 5, and a contact layer 6 are laminated for example on one main face 1a of a substrate 1 in sequence. Then, a stripe-shaped SiO2 7 is formed on the contact layer 6 and etching is performed with it as a mask, thus forming a stripe-shaped ridge 8. An etchant with face orientation dependency is used for etching. Then, a mainstay part of the ridge 8 is overetched and a groove 9 is generated. When etching is performed again using an etchant without face orientation dependency with the SiO2 7 as a mask, etching does not advance within the groove 9 of the mainstay part of the ridge 8 greatly but advances at a flat part except the ridge 8, the groove 9 at the mainstay part of the ridge 8 nearly disappears, and the mainstay part of the ridge 8 is in a gentle shape. |
| 公开日期 | 1992-06-15 |
| 申请日期 | 1990-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81193]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,SHONO MASAYUKI. Manufacture of semiconductor device. JP1992167489A. 1992-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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