Semiconductor laser
文献类型：专利
| 作者 | MATSUI TERUHITO; NOMURA YOSHITOKU; TOKUDA YASUKI |
| 发表日期 | 1988-03-09 |
| 专利号 | JP1988054794A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To shorten the emitting light wavelength of a semiconductor laser by providing a light absorbing region in an optical waveguide of the laser to increase a resonator loss. CONSTITUTION:A P-type AlGaAs layer 5 and an N-type AlGaAs layer 3 to become clad layers are provided on and under a GaAs quantum well active layer 4, have forbidden band width larger than that of the layer 4, and smaller refractive index than that. Thus, a resonator is enclosed, and a light is enclosed, and the light is amplified to be oscillated between the reflecting end faces 8 of the resonator. The laser is recombined at carrier in the part of a P-type electrode 7 to provide a gain, but an optical waveguide under the part having no electrode becomes an optical absorption region 9 to increase its loss alphaac. The value of alpha is increased due to the loss to increase the resonator loss. That is, the same material can oscillate in a shorter wavelength. |
| 公开日期 | 1988-03-09 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MATSUI TERUHITO,NOMURA YOSHITOKU,TOKUDA YASUKI. Semiconductor laser. JP1988054794A. 1988-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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