半導体レ—ザ素子及びその製造方法
文献类型：专利
| 作者 | 高橋 向星; 細田 昌宏; 角田 篤勇; 須山 尚宏; 松井 完益 |
| 发表日期 | 1996-07-08 |
| 专利号 | JP2537295B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ素子及びその製造方法 |
| 英文摘要 | PURPOSE:To continuously oscillate visible beams, which exhibit excellent temperature properties and whose horizontal lateral modes are simplified at room temperature, by providing it with an AlGaAs layer excellent in thermal conductivity, and radiating the heat generated in the double structure consisting of AlGaInP efficiently outside a semiconductor laser element. CONSTITUTION:A stripe groove, which reaches a (Al0.7Ga0.3)0.5In0.5P first etching stop layer 7, is formed in the GaAs light absorbing layer 8 and the (Al0.4Ga0.6)0.5 In0.5In0.5P second etching stop layer 9, which are stacked on the first conductivity type GaAs substrate 1, and a several molecular layers of Al0.7Ga0.3As layer 10 is formed at the bottom of the stripe groove. On the other hand, the second conductivity type Al0.7Ga0.3As regrowth clad layer 11, which is formed to fill up the stripe groove, is designed as a layer, which has a large band gap and a small refractive index for shutting the light generated in an active layer 5 up in the double hetero structure. Therefore, inside and outside the stripe groove provided above the double hetero structure, an effective error in refractive indexes occurs, and the horizontal lateral modes of laser beams are simplified. |
| 公开日期 | 1996-09-25 |
| 申请日期 | 1990-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81198]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 高橋 向星,細田 昌宏,角田 篤勇,等. 半導体レ—ザ素子及びその製造方法. JP2537295B2. 1996-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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