Semiconductor laser manufacturing method
文献类型：专利
| 作者 | YAMANE, KEIJI; UEDA, TETSUO; KIDOGUCHI, ISAO; KAWATA, TOSHIYA |
| 发表日期 | 2008-10-28 |
| 专利号 | US7442628 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser manufacturing method |
| 英文摘要 | A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target. |
| 公开日期 | 2008-10-28 |
| 申请日期 | 2007-02-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | YAMANE, KEIJI,UEDA, TETSUO,KIDOGUCHI, ISAO,et al. Semiconductor laser manufacturing method. US7442628. 2008-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。