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文献类型：专利
| 作者 | OOSHIMA MASAAKI; MATSUKI MICHIO; AKASAKI ISAMU |
| 发表日期 | 1987-10-22 |
| 专利号 | JP1987049999B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To decrease a threshold value current by setting a striped electrode of a laser element having an epitaxial layer containing three kinds of elements among In, Ga, As and P so that the longitudinal direction thereof may correspond with the strong direction of the lattice stripes of a substrate on the (100) surface of the substrate containing Ga, P and As. CONSTITUTION:The growth values of GaAsP on the (100) surface of GaAs occur the lattice stripes having uneveness which cross at right angles one another in the (110) direction, said stripes being plentiful in the horizontal CD direction, but few in the longitudinal direction. A double hetero-epitaxial growth is performed by a liquid phase on such substrate. The first clad layer 2, active layer 3, and a second clad layer 4 are allowed to grow on a GaAsP. In this case, the sectional surface (cleveage) of AB has a plenty of uneveness, but the sectional surface of CD is a very even growth surface. When the stripes electrode is formed on the wafer, if the longitudinal direction of the electrode is formed parallel to the CD direction, the threshold value current can decreased extremely. |
| 公开日期 | 1987-10-22 |
| 申请日期 | 1980-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,MATSUKI MICHIO,AKASAKI ISAMU. -. JP1987049999B2. 1987-10-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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