Semiconductor laser device
文献类型：专利
| 作者 | GOTO YUKIO; NAGAI YUTAKA |
| 发表日期 | 1989-08-14 |
| 专利号 | JP1989201978A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve yield by eliminating one part or all of an active layer and a clad layer which do not contribute to oscillation and by making electrical conductive type near the exposed at this surface at this time to that of substrate or by mutually diffusing the component elements of the active layer and the clad layer to form an active area. CONSTITUTION:After forming a clad layer 2, an active layer 3, a clad layer 4, and a contact layer 6 on a substrate 1, the clad layer 2, the active layer 3, the clad layer 4, and the contact layer 6 other than active region are removed. After forming an active region 8, p-type impurities are diffused from the exposure surface and the area closer to the exposure surface of the substrate 1, the clad layer 2, and the active layer 3 is inverted from n-type to p-type. At this time, mutual diffusion occurs between the clad layer 4 and the active layer 3 simultaneously and A1 enters the active layer 3. Then, by allowing a crystal to grow while stripe-like masks such as SiNx and SiO2 are being adhered, a current block layer 5 is formed selectively at a part other than the stripe 8 for feeding current. Then, a stripe-like mask 11 is removed and a contact layer 6 is formed. It enlarges the band gap and reduces reactive current to achieve a low threshold value. |
| 公开日期 | 1989-08-14 |
| 申请日期 | 1988-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | GOTO YUKIO,NAGAI YUTAKA. Semiconductor laser device. JP1989201978A. 1989-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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