Manufacture of semiconductor element
文献类型:专利
作者 | FUKUNAGA TOSHIAKI; HORIKAWA HIDEAKI; IMANAKA KOUICHI; MATOBA AKIHIRO |
发表日期 | 1985-08-17 |
专利号 | JP1985157283A |
著作权人 | OKI DENKI KOGYO KK |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor element |
英文摘要 | PURPOSE:To enable the simple and easy manufacture of the titled device which can be operated on low-drive-currents and with high efficiency and has long lifetimes by a method wherein a current stricture layer is formed at the same time with the removal of thermal damage from the surface layer by meltback, and a liquid phase epitaxial growth is performed on the surface layer. CONSTITUTION:The first layer 4a is exposed by forming a stripe groove 11 in the second semiconductor layer 9 and the first semiconductor layer 8. The second epitaxial growth is performed by following this meltback treatment: a P-InP layer 4b made of the same conductivity type and the same material as those of the first layer 4a is grown on the exposed surfaces of the first layer 4 and the remaining first and second semiconductor layers 8a and 9a, thus making this layer 4b as the second layer of the upper side clad layer; then, a P-In1-sGasAs1-tPt contact layer 13 is epitaxially grown thereon in liquid phase. Thereby, the upper side clad layer 4 is composed of the first layer 4a and the second layer 4b, and at the same time the first and second semiconductor layers 8a and 9a can be formed as the inner current stricture layer 12. Then, the semiconductor laser element can be obtained by evaporation of the P-side electrode 14 on the upper side surface of the contact layer 13, and the N-side electrode 15 on the lower side surface of a substrate |
公开日期 | 1985-08-17 |
申请日期 | 1983-12-26 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/81214] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI DENKI KOGYO KK |
推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,HORIKAWA HIDEAKI,IMANAKA KOUICHI,et al. Manufacture of semiconductor element. JP1985157283A. 1985-08-17. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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