中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Manufacture of semiconductor element

文献类型:专利

作者FUKUNAGA TOSHIAKI; HORIKAWA HIDEAKI; IMANAKA KOUICHI; MATOBA AKIHIRO
发表日期1985-08-17
专利号JP1985157283A
著作权人OKI DENKI KOGYO KK
国家日本
文献子类发明申请
其他题名Manufacture of semiconductor element
英文摘要PURPOSE:To enable the simple and easy manufacture of the titled device which can be operated on low-drive-currents and with high efficiency and has long lifetimes by a method wherein a current stricture layer is formed at the same time with the removal of thermal damage from the surface layer by meltback, and a liquid phase epitaxial growth is performed on the surface layer. CONSTITUTION:The first layer 4a is exposed by forming a stripe groove 11 in the second semiconductor layer 9 and the first semiconductor layer 8. The second epitaxial growth is performed by following this meltback treatment: a P-InP layer 4b made of the same conductivity type and the same material as those of the first layer 4a is grown on the exposed surfaces of the first layer 4 and the remaining first and second semiconductor layers 8a and 9a, thus making this layer 4b as the second layer of the upper side clad layer; then, a P-In1-sGasAs1-tPt contact layer 13 is epitaxially grown thereon in liquid phase. Thereby, the upper side clad layer 4 is composed of the first layer 4a and the second layer 4b, and at the same time the first and second semiconductor layers 8a and 9a can be formed as the inner current stricture layer 12. Then, the semiconductor laser element can be obtained by evaporation of the P-side electrode 14 on the upper side surface of the contact layer 13, and the N-side electrode 15 on the lower side surface of a substrate
公开日期1985-08-17
申请日期1983-12-26
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/81214]  
专题半导体激光器专利数据库
作者单位OKI DENKI KOGYO KK
推荐引用方式
GB/T 7714
FUKUNAGA TOSHIAKI,HORIKAWA HIDEAKI,IMANAKA KOUICHI,et al. Manufacture of semiconductor element. JP1985157283A. 1985-08-17.

入库方式: OAI收割

来源:西安光学精密机械研究所

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