Semiconductor laser
文献类型：专利
| 作者 | TSUCHIYA TOSHIO; MISE KAZUAKI |
| 发表日期 | 1986-04-08 |
| 专利号 | JP1986067979A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser of a stable lateral mode by a method wherein a buffer layer, an active layer and a clad layer are formed on a III-V group compound semiconductor and a width of the active layer located in the middle is narrowed and the layer is recessed by etching and the first and second buried layers fill the recess around the inversed mesa. CONSTITUTION:On a P type InP substrate 21 having a (100) plane, a P type buffer layer 22, an InGaAsP active layer 23, an N type InP clad layer 24 are laminated and grown to form a double hetero structure. Nextly a mask 25 consisting of SiO2 orSi3N4 of a strip shape in parallel to direction is arranged in the layer 24 and etching is done to form an inversed mesa structure recessed into the layer 22. After that, only the active layer 23 is etched selectively to be narrowed the width and recessed inward and and N type InP layer 27 which will become the first buried layer is deposited on the side plane of mesa with filling the grooves 26a and 26b produced on both sides of the layer 23. On the layer 27, the second P type InP layer 28 is laminated with levelling its surface to a surface of the layer 24. Thus the laser which operates at a low threshold value can be obtained. |
| 公开日期 | 1986-04-08 |
| 申请日期 | 1984-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81216]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | TSUCHIYA TOSHIO,MISE KAZUAKI. Semiconductor laser. JP1986067979A. 1986-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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