Semiconductor laser device
文献类型：专利
| 作者 | OKAI MAKOTO; SAKANO SHINJI; UOMI KAZUHISA; KAYANE NAOKI |
| 发表日期 | 1990-06-13 |
| 专利号 | JP1990154491A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a stable longitudinal single mode selectivity and to vary an oscillation wavelength in a range of 10nm by applying a magnetic field from a specific direction to a semiconductor laser device. CONSTITUTION:An InGaAsP active layer 2 doped with 0.5wt.% of erbium with an organic metal epitaxially grown layer, a P-type InGaAsP antimeltback layer, a P-type InP clad layer 4, a P-type InGaAsP can layer 5 are sequentially grown in a multilayer from top of an N-type InP substrate Then, a P-type side electrode 6 and an N-type side electrode 7 are formed by an electron beam depositing method, cleaved 300mum of resonator to obtain a desired laser structure. A coil 8 is provided above and below semiconductor lasers 1 - 7, and a magnetic field is applied in a direction of an arrow. Thus, an oscillation wavelength can be varied over a range of 10nm, and it can be oscillated in a longitudinal single mode over this wavelength varying range. |
| 公开日期 | 1990-06-13 |
| 申请日期 | 1988-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81222]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OKAI MAKOTO,SAKANO SHINJI,UOMI KAZUHISA,et al. Semiconductor laser device. JP1990154491A. 1990-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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