Semiconductor laser
文献类型：专利
| 作者 | OTSUKA KENICHI; SUGIMOTO HIROSHI; TAI SHUICHI; KOJIMA KEISUKE; NODA SUSUMU |
| 发表日期 | 1988-04-19 |
| 专利号 | JP1988088888A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having a narrow oscillation spectrum by doping an acceptor impurity having activation energy equal to the activation energy of acceptor level specific for a mixed crystal of 4-element mixed crystal for forming an active layer. CONSTITUTION:When a voltage is applied forwardly between an N type InP substrate 1 and a P type InGaAsP contact layer 6, carrier is implanted in an acceptor-doped InGaAsP active layer 3, electrons and holes are enclosed in the layer 3 due to the refractive index difference and the forbidden band width difference of an N-type clad layer 2 and a P-type InP clad layer 5, and also enclosed laterally by a P-type InP buried layer 7 and an N-type InP buried layer 8, and recombined by radiation. Here, a light propagates in an InGaAsP guide layer 4 with a refractive index, and only the light of wavelength specified by the period of a diffraction grating obtains a gain to be laser-oscillated. |
| 公开日期 | 1988-04-19 |
| 申请日期 | 1986-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81229]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA KENICHI,SUGIMOTO HIROSHI,TAI SHUICHI,et al. Semiconductor laser. JP1988088888A. 1988-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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