半導体レーザ素子の製造方法
文献类型：专利
| 作者 | 内田 憲治; 山下 茂雄; 中塚 慎一; 梶村 俊 |
| 发表日期 | 1999-11-12 |
| 专利号 | JP3002526B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子の製造方法 |
| 英文摘要 | PURPOSE:To lessen a clad layer in thickness variation on both the sides of a ridge waveguide so as to enable a semiconductor laser element to be uniform in quality and enhanced in yield by a method wherein an opening is provided to the surface of a growth layer so as to reach an active layer after the growth of a crystal of double hetero-structure is finished, and the step of the opening is measured by a film thickness gauge. CONSTITUTION:A second clad layer is partially removed to make an active layer exposed, and the second clad layer by the exposed part is measured in thickness. A second clad layer etching mask is formed on a ridge waveguide forming part, the exposed part, and an evaluation ridge waveguide 12 formed adjacent to the exposed part, and the thickness of the mask is measured. The second clad layer is etched for the formation of a ridge waveguide and an evaluation ridge waveguide layer 12, and a level difference between the surface of the mask on the exposed part and the surface of the evaluation ridge waveguide 12 is measured. Therefore, the ridge waveguide 12 can be formed through the non-destructive direct measurement of the whole surface of a wafer. By this setup, a clad layer can be lessened in thickness dispersion, and a semiconductor laser element of this design can be improved in yield. |
| 公开日期 | 2000-01-24 |
| 申请日期 | 1990-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 内田 憲治,山下 茂雄,中塚 慎一,等. 半導体レーザ素子の製造方法. JP3002526B2. 1999-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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