Semiconductor laser device
文献类型：专利
| 作者 | OKAJIMA MASASUE; HATAGOSHI GENICHI; UEMATSU YUTAKA |
| 发表日期 | 1991-02-25 |
| 专利号 | JP1991044085A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase only the quantity of the intrusion of light to the n-type clad layer side having low resistivity without augmenting the distance of the intrusion of light to a p-type InGaAlP clad layer having high resistivity, and to reduce the optical density of an active layer by forming an optical guide layer between the active layer and an n-type clad layer. CONSTITUTION:Since an optical guide layer 12 having a refractive index higher than clad layers 11, 14 is formed brought into contact with an active layer 13, light is mainly wave-guided in the optical guide layer 12. Consequently, the optical density of the active layer 13 is made smaller than normal double hetero-structure having no optical guide layer having the same active-layer thickness by approximately forty %, and a COD optical output is increased by approximately one and a half times. Since the intrusion of light to the outside of the active layer 13 is extended to the optical guide layer 12 and n clad layer 11 side, the sum total of the thickness of the optical guide layer 12 and the clad layer 11 on the n side must be increased to 5mum in order to prevent the augmentation of absorption loss in a GaAs substrate 10. |
| 公开日期 | 1991-02-25 |
| 申请日期 | 1989-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81240]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,HATAGOSHI GENICHI,UEMATSU YUTAKA. Semiconductor laser device. JP1991044085A. 1991-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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