Semiconductor laser
文献类型：专利
| 作者 | KAWANO HIDEO |
| 发表日期 | 1991-10-08 |
| 专利号 | JP1991227088A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a real refractive index distribution without absorption loss by a method wherein an optical guide layer formed like a stripe-like mesa is provided adjacent to an active layer, and a refractive index distribution is formed based on the change of the optical guide layer in thickness. CONSTITUTION:An N-GaAs buffer layer 12, an N-(Al0.6Ga0.4)0.5InP clad layer 13, an active layer 14, an optical guide layer 15, a clad layer, and a P-Ga0.5In0.5P cap layer 17 are successively grown on an N-GaAs substrate 11 possessed of a (100) plane through an MOVPE method. In succession, a stripe-like SiO2 film mask is formed on the cap layer 17. Next, the thickness of the optical guide layer 15 both on the sides of the stripe-like mesa is controlled with an etching solution, and a current blocking layer 18 is selectively grown on the mesa. Then, the SiO2 film mask is removed, a P-GaAs contact layer 19 is grown on all the surface, a P-side electrode 20 is provided to a contact layer 19, and an N-side electrode 21 is built on the substrate 1 |
| 公开日期 | 1991-10-08 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81267]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KAWANO HIDEO. Semiconductor laser. JP1991227088A. 1991-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。