Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | TAKAHASHI YASUHITO; OGURA MOTOTSUGU |
| 发表日期 | 1990-07-19 |
| 专利号 | JP1990185087A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To laminate a clad layer of high quality on a diffraction grating by forming, on an active layer, the diffraction grating of a semiconductor layer having the same composition as that of an active layer and wide energy gap on the active layer. CONSTITUTION:A layer containing no Al which is chemically very active is employed as a semiconductor layer 5 for forming a diffraction grating 6. A semiconductor layer containing no Al is employed as an active layer 4, the semiconductor layer 5 having the same composition as that of the active layer 4 and a wide energy gap is laminated on the active layer 4 to form the diffraction grating 6. Accordingly, a semiconductor layer containing active Al which is chemically very active is not exposed with the air. Thus, a crystal growth on the diffraction grating 6 is facilitated to obtain a crystal of high quality. |
| 公开日期 | 1990-07-19 |
| 申请日期 | 1989-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKAHASHI YASUHITO,OGURA MOTOTSUGU. Semiconductor laser device and manufacture thereof. JP1990185087A. 1990-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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