Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | NISHITANI YORIMITSU |
| 发表日期 | 1983-12-22 |
| 专利号 | JP1983220486A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a preferable P-N junction surface and to obtain preferable element characteristics by continuously growing a P-N junction which has current narrowing function. CONSTITUTION:A p type InP layer 12 and an n type InP layer 13 are sequentially formed on an InP substrate An SiO2 film 14 is then formed on the layer 13, and a groove forming window 15 is formed on the layer 14. Then, a V- shaped window 16 which reaches the substrate 11 via the window 15 is selectively formed. After the layer 14 is removed, an n type InP clad layer 17, an InGaAs P active layer 18 and a p type InP clad layer 19 are sequentially formed on the groove 16. At this time, an n type InP layer 17' and an InGaAsP layer 18 are sequentially formed even on the surface of the layer 13. According to this method, since the layers 12, 13 are continuously grown, air pollution, wet etching solution residue and P sublimation do not occur on the surface of the layer 12, but preferable P-N junction boundary can be obtained. Further, the layer 13 may be controlled to the thickness which does not produce a breakdown. |
| 公开日期 | 1983-12-22 |
| 申请日期 | 1982-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81273]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU. Manufacture of semiconductor light emitting element. JP1983220486A. 1983-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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