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文献类型：专利
| 作者 | IKEDA KENJI; IKUWA YOSHITO; AOYANAGI TOSHITAKA |
| 发表日期 | 1993-01-20 |
| 专利号 | JP1993004832B2 |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent breakdown at the end face even during high output operation, by providing a pair of semiconductor layers adapted to have a higher refraction index in their sections adjacent to one resonator end face, on the outer side face of another pair of semiconductor layers constituting a double hetero-structure on a crystal substrate. CONSTITUTION:A combination of P-type Ga1-xAlxAs clad layer 2 and an N-type Ga1-xAlxAs clad layer 4 provides a double hetero structure. When carriers are injected from electrodes 7 and 8, those carriers are confined in an Ga1-yAlyAs active layer 3 and recoupled to cause induced emission of laser beams. If the clad layer 4 is made thin, the laser beams take configurations of distribution of intensities of light effectively confined in the active layer 3 because the part of the active layer 3 contacted with the semiconductor layer 13 is interposed between the thick clad layers. Thus, as the diameter of the laser beam spot in the vertical direction to the active layer 3 at the resonator end face 12 is increased equivalently, the optical density at the end face is decreased. Accordingly, the end face is hardly broken down even during high output operation. |
| 公开日期 | 1993-01-20 |
| 申请日期 | 1986-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81286]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKEDA KENJI,IKUWA YOSHITO,AOYANAGI TOSHITAKA. -. JP1993004832B2. 1993-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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