Semiconductor laser
文献类型：专利
| 作者 | MUSHIAGE, MASATO; TEZEN, YUTA; MURAYAMA, MINORU |
| 发表日期 | 1999-08-03 |
| 专利号 | US5933443 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser including a first conductive type of lower clad layer, active layer, a second conductive type of upper first clad layer, the first conductive type of current blocking layer having a stripe shaped open portion, and the second conductive type of upper second clad layer laminated in order on the first conductive type of GaAs substrate, wherein each portion in contact with the lower clad layer, the active layer, the upper first and second clad layer and at least the upper second clad layer of the current blocking layer is composed of a compound semiconductor to be represented by a formula, in which (AlxGa1-x)yIn1-yP (x is 0 |
| 公开日期 | 1999-08-03 |
| 申请日期 | 1996-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81293]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | MUSHIAGE, MASATO,TEZEN, YUTA,MURAYAMA, MINORU. Semiconductor laser. US5933443. 1999-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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