Semiconductor laser device
文献类型：专利
| 作者 | OOTSUKA KENJIYU; IWAMURA HIDETOSHI; TARUCHIYA SEIGO |
| 发表日期 | 1984-06-18 |
| 专利号 | JP1984105394A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the transmission threshold value, improve the transmission efficiency, and contrive to stabilize for a long period by a method wherein an active layer in a semiconductor laminated body is constructed in a super lattice structure, and a conductive layer formed on the semiconductor laminated body is formed into a specific shape. CONSTITUTION:The semiconductor layer 3 constituting the semiconductor laminated body 5 has the super lattice structure wherein a semiconductor layer 21 made of e.g. single crystal GaAs and having the thickness of several 1,000Angstrom or less as a quantum well layer and a semiconductor layer 22 made of e.g. AlzGa1-zAs (0 |
| 公开日期 | 1984-06-18 |
| 申请日期 | 1982-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81297]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | OOTSUKA KENJIYU,IWAMURA HIDETOSHI,TARUCHIYA SEIGO. Semiconductor laser device. JP1984105394A. 1984-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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