Double heterostructure stripe geometry semiconductor laser device
文献类型：专利
| 作者 | YONEZU, HIROO |
| 发表日期 | 1978-12-19 |
| 专利号 | USR29866 |
| 著作权人 | NIPPON ELECTRIC COMPANY, LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Double heterostructure stripe geometry semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region. |
| 公开日期 | 1978-12-19 |
| 申请日期 | 1978-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81305]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC COMPANY, LIMITED |
| 推荐引用方式 GB/T 7714 | YONEZU, HIROO. Double heterostructure stripe geometry semiconductor laser device. USR29866. 1978-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。