Semiconductor laser
文献类型：专利
| 作者 | NAGAI HARUO; NOGUCHI ETSUO; IKEGAMI TETSUHIKO |
| 发表日期 | 1983-09-26 |
| 专利号 | JP1983162090A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable to obtain an oscillation of a distributed feedback mode or distributed reflection mode having good characteristics by forming a light absorbing layer at least between an active layer and an element end face, thereby suppressing an oscillation in a Fabry Perot mode. CONSTITUTION:A light which is generated in a GaInAsP mixed crystal layer 4 in response to the implantation of a current from an ohmic electrode 12 to an ohmic electrode 11 is leaked to an N type GaInAsP four-element mixed crystal layer 3, and transmitted to the layers 4 and 3. The light which is propagated toward the end face 9 of one element formed by cleavage is reflected in sufficient reflectivity of the end face 9, but the light which is propagated toward the end face 10 of other element is absorbed by a GaInAsP mixed crystal layer 6 which is smaller than the layers 3, 4 in the forbidden band width formed in contact with the end face 10 and attenuated. Accordingly, it reach in small amount to the end face 10. The light which is arrived at the end face 10 and reflected is again absorbed and attenuated by the layer 6, and the quantity of light returned to a light waveguide is extremely small, and can accordingly substantially and completely prevented in the laser oscillation of Fabry Perot mode. |
| 公开日期 | 1983-09-26 |
| 申请日期 | 1982-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81311]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | NAGAI HARUO,NOGUCHI ETSUO,IKEGAMI TETSUHIKO. Semiconductor laser. JP1983162090A. 1983-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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