Semiconductor laser device
文献类型：专利
| 作者 | FUJITA, TOSHIHIRO; OHYA, JUN; MATSUDA, KENICHI; SERIZAWA, HIROYUKI |
| 发表日期 | 1988-12-27 |
| 专利号 | US4794608 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all four characteristics, which are; (1) stable single longitudinal mode oscillation; (2) narrow spectral linewidth; (3) suppression of wavelength chirping due to current modulation; and (4) low noise and to be applied as a light source for optical fiber communication, optical information processing or the like. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1985-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
| 推荐引用方式 GB/T 7714 | FUJITA, TOSHIHIRO,OHYA, JUN,MATSUDA, KENICHI,et al. Semiconductor laser device. US4794608. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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