Compound semiconductor device and manufacture thereof
文献类型：专利
| 作者 | HASEGAWA KATSUYA; OONAKA SEIJI |
| 发表日期 | 1985-02-08 |
| 专利号 | JP1985025287A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To grow another epitaxial layer on a layer with a grating in an optical integrated circuit device with high controllability without damaging crystallizability by preparing the grating in which impurity regions are formed periodically through ion implantation, etc. CONSTITUTION:An insulating film and a metal on a P type InP substrate 21 are used as masks 22, opening sections 23 are bored to the masks through holographic exposure technique, etc., and the ions of Si, S, Te, etc. such as Si ions difficult to generate thermal diffusion on heat treatment in a post-process are implanted to the substrate through the opening sections 23 under conditions of 100keV and 10cm. Consequently, a grating is formed by periodically shaping N type regions 24 in the substrate 2 As a result, currents injected from the P type substrate 21 are modulated by P-N junctions periodically formed. Accordingly, when an active layer as a light-emitting region for a semiconductor laser is laminated on the substrate, periodicity is generated in gains, and the same effect as conventional irregular gratings is obtained. |
| 公开日期 | 1985-02-08 |
| 申请日期 | 1983-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HASEGAWA KATSUYA,OONAKA SEIJI. Compound semiconductor device and manufacture thereof. JP1985025287A. 1985-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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