Semiconductor light emitting element
文献类型：专利
| 作者 | NAKAJIMA KAZUO |
| 发表日期 | 1987-02-25 |
| 专利号 | JP1987043192A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To improve light emitting efficiency and to obtain an element characteristic of high quantum efficiency, by constituting a clad layer or an active layer with a material having a miscibility gap. CONSTITUTION:N- and P-Al0.9Ga0.1P0.386Sb0.6142 and 4 are clad layers. The energy gap is 84 eV (indirect transition) and larger than 35 eV of InP. Therefore, confinement effect of carriers is increased. By using an SiO2 mask 7, a wafer is etched in a mesa shape. With the SiO2 mask 7 being attached, P-InP 5 and N-InP 6 are embedded by liquid phase growing. The SiO2 mask 7 is removed, and a new SiO2 film 8 is attached and patterned. Electrodes 9 and 10 are formed, and an embedded type semiconductor laser is completed. |
| 公开日期 | 1987-02-25 |
| 申请日期 | 1985-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAJIMA KAZUO. Semiconductor light emitting element. JP1987043192A. 1987-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。