Semiconductor laser with optical waveguide
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1990-10-23 |
| 专利号 | JP1990260587A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with optical waveguide |
| 英文摘要 | PURPOSE:To obtain the function for confining a light along a direction in paral lel with a junction by a method wherein a II-VX compound semiconductor layer is formed locally on an optical waveguide layer. CONSTITUTION:A ZnSe layer 109 which is a II-VI compound semiconductor layer is formed by a selective epitaxial growth method by using an SiO2 mask or the like. The organic compounds of Zn and Se are employed as the raw materials of the selective epitaxial growth of the ZnSe layer 109 and the selec tive epitaxial growth is carried out by an MOCVD method under the conditions of a growth pressure not higher than 100Torr, a growth temperature not lower than 400 deg.C and not higher than 700 deg.C and a raw material supply mole-ratio of the group VI raw materiel the group 11 row material not higher than 6. That is, the SiO2 mask is formed on the substrate except an optical waveguide region so as to be connected directly to both the sides of a rib and the rib and then the ZnSe layer 100 is formed by epitaxial growth. If the ZnSe layer 109 formed as described above is applied to an optical waveguide, it functions efficiently for light confinement. |
| 公开日期 | 1990-10-23 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81347]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Semiconductor laser with optical waveguide. JP1990260587A. 1990-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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