Semiconductor laser device
文献类型：专利
| 作者 | NANBARA SEIJI; OKADA MASATO |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076183A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To elevate a COD level and to increase an output by forming a first clad layer, an active layer, a second clad layer having a striped protruding section, a current blocking layer and a contact layer onto a substrate, doping a P-type dopant region to the striped protruding section and a section just under the protruding section in specified depth and bringing the conductivity type of the dopant region to a P type. CONSTITUTION:A P-Al0.5Ga0.5As second clad layer 4 has height h1 in the vicinity of a laser end-face, the inside thereof has a striped protruding section 5, in which h2h1 |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,OKADA MASATO. Semiconductor laser device. JP1991076183A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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