光半導体素子の製造方法
文献类型：专利
| 作者 | 北村 光弘; 佐々木 達也 |
| 发表日期 | 1997-12-05 |
| 专利号 | JP2725449B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体素子の製造方法 |
| 英文摘要 | PURPOSE:To make it possible to obtain an optical semiconductor element, which is superior in reproducibility and is superior in a controllability of the position of a growth layer, by a method wherein an insulating film is formed on a semiconductor substrate, one part of the insulating film is removed into a stripe form, a semiconductor multilayer structure comprising an active layer is selectively grown at the removed part of the insulating film into a triangular stripe form and after the insulating film is removed, current blocking layers are grown at the region other than the semiconductor multilayer structure on the substrate. CONSTITUTION:An SiO2 insulating film 2 is formed on an N-type InP substrate 1, one part of the film 2 is removed into a stripe form in parallel to the crystal orientation and as the film 2 is left, an n-type InP buffer layer 3, an InGaAsP active layer 4 and a p-type InP clad layer 5 are grown in order, the B crystal face (111) is formed and the growth of the crystal face is roughly stopped at a place where the crystal face is grown into a triangular form. Then, the film 2 is removed and a p-type InP blocking layer 6, an n-type InP blocking layer 7, a p-type InP layer 8 and a p-type InGaAsP electrode layer 9 are grown in order. At this time, the two blocking layers are not grown on the side of a triangular mesa stripe but are grown from the flat region on the substrate. |
| 公开日期 | 1998-03-11 |
| 申请日期 | 1990-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 北村 光弘,佐々木 達也. 光半導体素子の製造方法. JP2725449B2. 1997-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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