半導体レ-ザ素子
文献类型：专利
| 作者 | 茅根 直樹; 魚見 和久; 福沢 董; 松枝 秀明; 梶村 俊 |
| 发表日期 | 1995-02-08 |
| 专利号 | JP1995012103B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ素子 |
| 英文摘要 | PURPOSE:To modulate directly 10GHz nor higher frequencies in a laser element having an active layer thickness smaller in size than the wave flux of free electrons in a crystal by adding an impurity in higher density than the active layer or a barrier layer. CONSTITUTION:An n-type Ga0.55Al0.45As clad layer 2 is superposed on an n-type GaAs substrate 1, and further a p-type Ga1-yAlyAs (y=0-0.02, 3-15nm thick) 3 and no-added Ga1-zAlzAs barrier (z>y, 3-20nm of thick) 4 are laternately generated. Then, a p-type Ga0.55Al0.45As layer 4, and a p-type GaAs layer 6 are superposed, a Cr-Au electrode 7 is attached, a GeNi-Au film 8 is deposited on the substrate 1, and chips are formed. Here, when Mg or Be of 1X10cm is added to the active layer, a fine gain is increased, a frequency limit arrives at 20GHz, and a laser element is largely accelerated. When the active layers are two or more, it may be doped in high density in a barrier layer having larger band gap than the active layer between the active layers. |
| 公开日期 | 1995-02-08 |
| 申请日期 | 1985-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81373]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 茅根 直樹,魚見 和久,福沢 董,等. 半導体レ-ザ素子. JP1995012103B2. 1995-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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