Semiconductor laser
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI |
| 发表日期 | 1988-04-01 |
| 专利号 | JP1988072176A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a short-wavelength semiconductor laser having a long life by a method wherein, at the semiconductor laser whose active layer is sandwiched between a first clad layer and a second one, the active layer and clad layers are doped with a very small amount of In so that the occurrence of a crystal defect can be suppressed. CONSTITUTION:At a semiconductor laser whose active layer 5 is sandwiched between the first and second clad layers 4, 6, the active layer 5 and clad layers 4, 6 are doped with a very small amount of In. If the layer composed of GaAs or GaAlAs is doped with a very small amount of In, the occurrence of a crystal defect can be suppressed at an oscillation layer composed of GaAlAs where the composition ratio of Al is big, and it is possible to obtain a short- wavelength semiconductor laser having a long life. |
| 公开日期 | 1988-04-01 |
| 申请日期 | 1986-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81383]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI. Semiconductor laser. JP1988072176A. 1988-04-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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