Semiconductor laser apparatus
文献类型：专利
| 作者 | OEDA, YASUO; OKADA, SATORU; IGARASHI, KOUICHI; NAITO, YUMI; MURO, KIYOFUMI; KOISO, TAKESHI; YAMADA, YOSHIKAZU; OKUBO, ATSUSHI; FUJIMOTO, TSUYOSHI |
| 发表日期 | 2003-04-08 |
| 专利号 | US6546032 |
| 著作权人 | MITSUI CHEMICALS INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser apparatus |
| 英文摘要 | On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 mum), an n-type optical waveguide layer (GaAs, t=0.49 mum), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 mum), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 mum), a p-type optical waveguide layer (GaAs, t=0.49 mum), a p-type cladding layer (AlGaAs, x=0.20, t=08 mum), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation. |
| 公开日期 | 2003-04-08 |
| 申请日期 | 2000-08-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS INC. |
| 推荐引用方式 GB/T 7714 | OEDA, YASUO,OKADA, SATORU,IGARASHI, KOUICHI,et al. Semiconductor laser apparatus. US6546032. 2003-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。