Semiconductor laser device
文献类型：专利
| 作者 | KONNO NOBUAKI; IKUWA YOSHITO |
| 发表日期 | 1989-06-26 |
| 专利号 | JP1989161794A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device capable of emitting in single mode, widening the emission area, and high output operation, by forming a refractive index distribution and gain distribution in the transverse direction of a wide ridge and composing so as to form a plurality of lasers adjacent to the ridge. CONSTITUTION:A semiconductor laser device comprises a semiconductor substrate 1, on which a semiconductor active layer 3, first and second semiconductor clad layers 2 and 4 mounted adjacent to and having a wider forbidden band than said active layer 3, and a third semiconductor blocking layer S having a wider forbidden band than and of a different conduction type from, and mounted on said second semiconductor clad layer 4 having a striped-looking ridge 16 of 10mum or more width are installed at least. A plurality of gain waveguide paths are formed on the ridge 18 by forming a plurality of striped- looking mesa-shaped grooves on the third semiconductor blocking layer 5 on the ridge 16, for example a n-type AlGaAs blocking layer 5 having two mesa- shaped grooves formed on a p-type AlGaAs upper clad layer 4 having an about 15mum wide ridge 16. |
| 公开日期 | 1989-06-26 |
| 申请日期 | 1987-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81399]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONNO NOBUAKI,IKUWA YOSHITO. Semiconductor laser device. JP1989161794A. 1989-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。