Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; USHIJIMA ICHIROU; NAKAI SABUROU |
| 发表日期 | 1984-03-13 |
| 专利号 | JP1984044820A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent a surface irregularity from being deformed by a method wherein the surface irregularity is formed on a substrate by chemical etching, residual products are removed by a thermal treatment, liquid for growth is melted and the substrate is kept at high temperature and a semiconductor layer is formed on the substrate by a liquid phase growth. CONSTITUTION:A p type InP layer 12 is formed on an n type InP substrate 11 by an epitaxial growth. Then an SiO2 film 13 is formed and an aperture of stripe shape is made. Then a V-groove 14 is formed by chemical etching using the film 13 as a masking. Then an n type InP cladding layer 15, a non-doped InGaAsP activated layer 16 and a p type InP cladding layer 17 are successively formed by a thermal treatment. An n type InP layer 15' and an InGaAsP layer 16' are also formed on the area other than the V-groove 14. |
| 公开日期 | 1984-03-13 |
| 申请日期 | 1982-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,USHIJIMA ICHIROU,NAKAI SABUROU. Manufacture of semiconductor device. JP1984044820A. 1984-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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