Semiconductor laser device and method for producing the same
文献类型：专利
| 作者 | MANNOU, MASAYA; FUKUHISA, TOSHIYA |
| 发表日期 | 2003-07-08 |
| 专利号 | US6590918 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for producing the same |
| 英文摘要 | A method for producing a semiconductor laser element includes steps of: forming a semiconductor layered structure on a first conductivity type semiconductor substrate, the semiconductor layered structure including a first conductivity type cladding layer, a quantum well active layer, and a first cladding layer of a second conductivity type; forming a diffusion control layer in a predetermined region on the semiconductor layered structure; forming a material layer which acts as an impurity source on the diffusion control layer; and diffusing impurities by a first thermal treatment from the material layer through the diffusion control layer into at least a part of the semiconductor layered structure including at least a part of the quantum well active layer, thereby forming an impurity diffusion region, wherein a part of the quantum well active layer in at least one cavity end face is disordered by diffusion of the impurities. |
| 公开日期 | 2003-07-08 |
| 申请日期 | 2000-11-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81412]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MANNOU, MASAYA,FUKUHISA, TOSHIYA. Semiconductor laser device and method for producing the same. US6590918. 2003-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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