Semiconductor laser
文献类型：专利
| 作者 | FUKUDA, CHIE |
| 发表日期 | 2014-05-27 |
| 专利号 | US8737446 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator. |
| 公开日期 | 2014-05-27 |
| 申请日期 | 2011-03-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | FUKUDA, CHIE. Semiconductor laser. US8737446. 2014-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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