Semiconductor laser device
文献类型：专利
| 作者 | NAGASAKA HIROKO; MOGI NAOTO |
| 发表日期 | 1984-12-12 |
| 专利号 | JP1984220985A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device of high reliability having no contamination and no defect in spite of formation of the resonator end surface by etching by a method wherein an active layer or the substantial excitation region is provided inside the end surface at a position alienated from the end surface, in the laser device having the hetero junction structure consisting of the active layer and a clad layer. CONSTITUTION:On an N type GaAs substrate 1, an N type GaAlAs main clad layer 2, an N type GaAlAs auxiliary clad layer 3, a P type GaAs active layer 4, a P type GaAlAs auxiliary clad layer 5, a P type GaAlAs main clad layer 6, a P type GaAs ohmic contact layer 7 are epitaxially grown by lamination. Next, a GaAlAs mask layer 21 is provided on the layer 7 and covered with a stripe resist 22, and then this laminated body is changed into a mesa form reaching the substrtate by etching. Thereafter, the resist 22 is removed, this laminated body is buried in a GaAlAs layer 8 provided on the substrate with the layer 21 as a mask, and the resonator end surface is positioned in the layer 8. |
| 公开日期 | 1984-12-12 |
| 申请日期 | 1983-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | NAGASAKA HIROKO,MOGI NAOTO. Semiconductor laser device. JP1984220985A. 1984-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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