Manufacture of buried type semiconductor laser element
文献类型：专利
| 作者 | NAKAI AKINOBU; IRIKAWA MASANORI |
| 发表日期 | 1990-04-12 |
| 专利号 | JP1990100387A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried type semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a vertical mesa in specified width with excellent reproducibility without leaving damage in an epitaxial film by etching a cap layer and an active layer through dry etching and etching clad layers on both surfaces of the active layer through wet etching. CONSTITUTION:A first conductivity type clad layer 2, an active layer 3, a second conductivity type clad layer 4 and a second conductivity type cap layer 5 are laminated successively onto a first conductivity type semiconductor substrate 1, a mask as an insulating layer is formed onto the cap layer 5. The layers from the second conductivity type cap layer 5 to the first conductivity type clad layer 2 are etched to shape a vertical mesa, and both sides of the mesa are buried with buried layers. In this case, the second conductivity type cap layer 5 is etched through dry etching, the second conductivity type clad layer 4 is etched through wet etching, the active layer 3 is etched through dry etching, and the first conductivity type clad layer 2 is etched through wet etching, thus forming the vertical means. Accordingly, the width of the active layer can be kept constant. |
| 公开日期 | 1990-04-12 |
| 申请日期 | 1988-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81422]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | NAKAI AKINOBU,IRIKAWA MASANORI. Manufacture of buried type semiconductor laser element. JP1990100387A. 1990-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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