Semiconductor laser
文献类型：专利
| 作者 | IMAI YUJI |
| 发表日期 | 1989-02-01 |
| 专利号 | JP1989030282A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To suppress the heat generation caused by an operation current by a method wherein an electrode leading-out layer made of compound semiconductor is formed on a substrate and compound semiconductor layers are built up on a partial region of the electrode leading-out layer to form a laser diode with a double-hetero-structure. CONSTITUTION:An electrode leading-out layer 2 made of n-type GaAs is formed on a semi-insulating GaAs substrate 1 by epitaxial growth. A buffer layer 3 made of n-type AlGaAs, a cladding layer 4 made of n-type AlGaAs, an active layer 5 made of AlGaAs and a cladding layer 6 made of P-type AlGaAs are formed on a partial region of the electrode leading-out layer 2. A double-hetero- structure is composed of the cladding layer 6, the active layer 5 and the cladding layer 4. An upper electrode 8 made of Ti/Pt/Au is formed on the surface of a cap layer 7 made of p-type GaAs. Further, a lower electrode 9 made of AuGe/Ni is formed on the other region of the electrode leading-out layer 2. A laser diode 10 is constituted by the respective compound semiconductor layers 2-7. |
| 公开日期 | 1989-02-01 |
| 申请日期 | 1987-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81432]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | IMAI YUJI. Semiconductor laser. JP1989030282A. 1989-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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