Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO; KUME ICHIROU; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1983-12-27 |
| 专利号 | JP1983225682A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the lateral junction stripe laser having an ion laser oscillation threshold current and excellent temperature characteristics by a method wherein, among the DC resistors located on a diode, especially the P-side DC resistor which produces a great influence is formed smaller in size. CONSTITUTION:Clad layers 2 and 4, consisting of AlyGa1-yAs (y>x), is grown on a semiinsulating GaAs substrate 1 astriding an AlxGa1-xAs active layer 3, and a GaAs control layer 5 is provided at both end parts on the surface of the layer 4. Then a P type drive region 7a, penetrating to inside the substrate 1 from the layer 4, is formed by diffusion in the center part of the above laminated material, and an active region 8 consisting of an active layer 3 is generated at the intermediate part of said region 7a. Also, a P type region 6a is formed by diffusion on the whole region on one side of the region 7a, and the other side is left untouched. Subsequently, an N-side electrode 9 is ocated on the contact layer 5 and a P-side electrode 10 is coated on the entire back side of the substrate Thus, regions 6a and 7a reaching the back side of the substrate 1 are provided, and the DC resistance on the P-side is reduced to one fourth or below, thereby enabling to lessen the oscillation threshold current. |
| 公开日期 | 1983-12-27 |
| 申请日期 | 1982-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81442]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,KUME ICHIROU,SOGOU TOSHIO,et al. Semiconductor laser device. JP1983225682A. 1983-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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