Semiconductor laser
文献类型：专利
| 作者 | AYABE MASAAKI; MATSUDA OSAMU; MORI YOSHIFUMI |
| 发表日期 | 1984-01-25 |
| 专利号 | JP1984014688A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser which can be readily manufactured and has uniform characteristics by forming a region which internally limits the current by utilizing the resultant difference of diffusing phenomena of impurity between the oblique part and the flat part of a hetero junction. CONSTITUTION:An oblique surface 1a1 which is extended in one direction is formed on the surface of a p type GaAs substrate 1, a p type GaAs buffer layer 7, a P type AlGaAs layer 8, an n type AlGaAs layer 9 are laminated and epitaxially grown on the entire surface which includes the surface. Then, an n type AlGaAs layer 10, a p type layer 4 which is formed to be flat while burying the oblique surface 1a1 produced so far, an AlGaAs active layer 2 which does not specify the conductive type, an n type AlGaAs clad layer 3, and an n type GaAs layer 14 are laminated and grown on the layer. A current passage 13 is naturally produced on the oblique surface of the layer 10 during the step of continuously epitaxially growing, and limited at the part 5 of the layer 10 which surrounds it. In this manner, the formation is simplified, thereby enhancing the mass productivity. |
| 公开日期 | 1984-01-25 |
| 申请日期 | 1982-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81446]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | AYABE MASAAKI,MATSUDA OSAMU,MORI YOSHIFUMI. Semiconductor laser. JP1984014688A. 1984-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。