半導体レ-ザ
文献类型：专利
| 作者 | 牧田 克男; 花光 幸和; 土屋 富志夫; 山口 茂実; 浅井 昭彦 |
| 发表日期 | 1996-01-31 |
| 专利号 | JP1996010779B2 |
| 著作权人 | アンリツ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To stabilize an oscillation mode and to lower a threshold electric current by a method wherein a mesa stripe composed of an inverted-mesa-shaped part, a vertical-shaped part and a forward-mesa-shaped part in succession is formed and buried layers are formed in the order of p-, n- and p-types so that an active layer can be narrowed. CONSTITUTION:A p-type InP clad layer 12, an In1-xGaxAs1-yPy active layer 13 and an n-type InP clad layer 14 are piled up on a p-type InP substrate 1 A mesa stripe is formed in the following manner: an inverted-mesa-shaped part 20 is formed by the layers 13 and 14; a vertical-shaped part 21 is formed by the upper-end part of the layer 12 and the substrate 11; a forward-mesa-shaped part 22 is formed by the upper part of the substrate 1 The circumference of the mesa stripe is covered with a p-type InP buried layer 15, an n-type InP buried layer 16 and a p-type InP buried layer 17. By this setup, a constricted part is eliminated; the active layer is situated near the part connecting the inverted-mesa-shaped part to the vertical-shaped part; accordingly, the width of the active layer is made to coincide with the width of the vertical-shaped part which is easy to control; it is possible to stabilize an oscillation mode of a laser beam and to lower a threshold electric current while a high output is maintained. |
| 公开日期 | 1996-01-31 |
| 申请日期 | 1987-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81448]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | アンリツ株式会社 |
| 推荐引用方式 GB/T 7714 | 牧田 克男,花光 幸和,土屋 富志夫,等. 半導体レ-ザ. JP1996010779B2. 1996-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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