Semiconductor laser device
文献类型：专利
| 作者 | ONO YUUICHI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; KAYANE NAOKI |
| 发表日期 | 1985-07-06 |
| 专利号 | JP1985126884A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce noises by forming current distribution from a P-electrode in structure, in which currents preferentially flow only through one part in a stripe, and keeping the thickness of a clad layer and an active layer within a predetermined range. CONSTITUTION:An N type GaAlAs clad layer 2, a GaAlAs active layer 3, a P type GaAlAs clad layer 4 and an N type GaAs current constriction layer 5 are formed on an N type GaAs substrate 1 in succession through an MOCVD method. A striped groove is shaped on the current constriction layer 5 through a photoetching process, only a stripe section is etched, a resist is removed, and a P type GaAlAs clad layer 6 and an N type GaAs cap layer 7 are formed through the MOCVD method. A diffusion window is formed by silicon oxide and Zn is diffused to shape a diffusion region 8, and a P type electrode 9 and an N type electrode 10 are formed. |
| 公开日期 | 1985-07-06 |
| 申请日期 | 1983-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81452]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ONO YUUICHI,NAKATSUKA SHINICHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1985126884A. 1985-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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