Semiconductor laser device
文献类型：专利
| 作者 | TANIMURA MICHIO; HIRAYAMA YUZO |
| 发表日期 | 1992-10-29 |
| 专利号 | JP1992306894A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which is lessened in threshold value and spectral line width and excellent in element characteristics by a method wherein an external stress is given to an active region possessed of a multi-quantum well structure. CONSTITUTION:A piezoelectric element 3 is a square pole, 1X1X75cm, and so constituted as to give an external stress to a semiconductor laser element by a piezoelectric effect. A very hard insulating material boron nitride 4 is formed into a truncated pyramid which has its top formed as large in area as the semiconductor laser element and its base formed as large in area as the piezoelectric element. A pressure can be given to the semiconductor laser element at the area ratio of 4000 to 3 by use of the very hard pressure transmission member 4. In a multi-quantum well structure of a semiconductor laser element 1, when a well layer is formed of InGaAs and a barrier layer is formed of InGaAsP, the elastic stiffness of an active region is 1X1011N/m or so. |
| 公开日期 | 1992-10-29 |
| 申请日期 | 1991-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TANIMURA MICHIO,HIRAYAMA YUZO. Semiconductor laser device. JP1992306894A. 1992-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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