Semiconductor light emitting device
文献类型：专利
| 作者 | KAWASUMI, TAKAYUKI; NAKAYAMA, NORIKAZU; ISHIBASHI, AKIRA; MORI, YOSHIFUMI |
| 发表日期 | 1998-03-24 |
| 专利号 | US5732099 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the direction. Side surfaces of the groove has the maximum inclination not larger than 60 DEG . The thickness of the p-type GaAs current block layer is 5 mu m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure. |
| 公开日期 | 1998-03-24 |
| 申请日期 | 1996-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWASUMI, TAKAYUKI,NAKAYAMA, NORIKAZU,ISHIBASHI, AKIRA,et al. Semiconductor light emitting device. US5732099. 1998-03-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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