Optical semiconductor device
文献类型：专利
| 作者 | FUKUDA MITSUO; HIRONO TAKUSHI; TAKESHITA TATSUYA; KOGURE OSAMU |
| 发表日期 | 1991-06-18 |
| 专利号 | JP1991142985A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To reduce distortions from electrodes and an insulating film to a light emitting region by providing grooves on a second clad layer, and extending second electrodes on the layer across the groove. CONSTITUTION:An n-type electrode 6 disposed on the exposed surface of a board 1 is provided, and a groove 10 and a clad layer 4 are covered with an insulating film 7 made of SiN, etc. A p-type electrode 8 disposed on the film 7 and connected to a cap layer 5 of a mesa part 4A is provided. The groove 10 is vacant, and the electrode 8 is extended from above the part 4A over the groove 10, and has a light emitting region 1 Thus, an electric short-circuit at the time of forming the electrode is prevented, distortions relative to the electrodes are reduced, and its yield and reliability are improved. |
| 公开日期 | 1991-06-18 |
| 申请日期 | 1989-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81467]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | FUKUDA MITSUO,HIRONO TAKUSHI,TAKESHITA TATSUYA,et al. Optical semiconductor device. JP1991142985A. 1991-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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