Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAKAHASHI SHOGO; KONO MINORU |
| 发表日期 | 1992-02-19 |
| 专利号 | JP1992049692A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate a need for a high-temperature driving process by a method wherein a diffusion operation is executed under a condition that the concentration of a diffusion source is reduced with the diffusion time, a low-concentration p-type diffusion region is formed, a diffusion operation is executed under a condition that the concentration of a diffusion source becomes definite with respect to the diffusion time and a p-type high-concentration diffusion region is formed at the inside of the p-type low-concentration diffusion region. CONSTITUTION:An Si3N4 film 3 for mask use is formed, by a thermal CVD method, on an Ink-based n-type epitaxial layer which in grown on an InP substrate; and a condition that the concentration of a diffusion source is reduced with the diffusion time is obtained by a sputtering operation. In addition, a first ZnO film 4 as a diffusion source is formed; and after that, a first SiO2 film 5 as a cap layer is formed by a sputtering operation in the same manner. Then, a thermal diffusion operation is executed; and a p-type low-concentration diffusion region 6 whose carrier concentration is at about 10cm is formed. The diffusion source 4 and the cap layer 5 are removed; and after that, a second ZnO film 7 as a diffusion source and a second SiO2 film 8 as a cap layer are formed by a sputtering operation. Then, a thermal diffusion operation is executed; and a p-type high-concentration diffusion region 9 whose carrier concentration is at about 10cm is formed on the inside of the p-type low-concentration region 6. |
| 公开日期 | 1992-02-19 |
| 申请日期 | 1990-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAHASHI SHOGO,KONO MINORU. Manufacture of semiconductor laser. JP1992049692A. 1992-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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