Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO |
| 发表日期 | 1982-10-23 |
| 专利号 | JP1982172788A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To eliminate the unequal inclination of an impurity in the deviation region of the interface of an active layer by a method wherein an impurity doped in a crystal layer connected to an active layer and an active layer by a substrate side is made as the same kind of P type in a laser element which epitaxially grew multilayer crystal structure having the active layer on a P type semiconductor substrate. CONSTITUTION:A P type Ga1-yAlyAs clad layer 2' and a Ga1-xAlxAs active layer 3' doped the same impurity as that in the clad layer 2' are stacked on a P type GaAs substrate 1 for liquidus epitaxial growth. Namely, the active layer 3' is set as P type and the same kind of an impurity selected from Zn, Ge, Mg or the like is used as the impurity added to the layers 2' and 3'. In this way, unequally does not exist even if an impurity is mixed to the layer 3' from the layer 2'. After that, an N type Ga1-yAlyAs clad layer 4 and an N type GaAs cap layer 5 are stacked on the layer 3' for growth and if necessary, a current strangulation mechanism is provided. |
| 公开日期 | 1982-10-23 |
| 申请日期 | 1981-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81482]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982172788A. 1982-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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