Semiconductor laser device
文献类型：专利
| 作者 | HONDA MASAHARU; HAMADA HIROYOSHI; SHONO MASAYUKI |
| 发表日期 | 1991-07-11 |
| 专利号 | JP1991161988A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent P from leaving the crystal surface of A GaInP at the time of re-growth, and improve the interface quality of a constriction layer, by forming an interface protecting layer between the etching surface of a clad layer of a stopper layer and a GaAs current constriction layer. CONSTITUTION:Double hetero junction structure is formed by crystalgrowing the following in order on an n-GaAs substrate 1; an n-GaInP buffer layer 2, an n-AlGaInP clad layer 3, a GaInP active layer 4, a p-AlGaInP clad layer 5, a p-GalnP band gap relieving layer 6, and a p-GaAs contact layer 7. An SiO2 film 13 is formed; by using it as a mask, the layers 7, 6 and a part of the layer 5 are etched; thus a mesa type protrusion 14 is formed. While the SiO2 film 13 is used as a mask as it is, an n-GaIn interface protecting layer 12 and an n-GaAs current constriction layer 8 are grown. The film 13 is eliminated, a p-GaAs contact layer 9 is grown, and a p-side electrode 10 and an n-side electrode 11 are vapor-deposited. |
| 公开日期 | 1991-07-11 |
| 申请日期 | 1989-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HONDA MASAHARU,HAMADA HIROYOSHI,SHONO MASAYUKI. Semiconductor laser device. JP1991161988A. 1991-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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