Semiconductor laser device
文献类型：专利
| 作者 | KUMABE HISAO |
| 发表日期 | 1988-01-13 |
| 专利号 | JP1988007691A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive to obtain the superior characteristics with good reproducibility and easily by a method wherein an active layer formed in a groove is turned into an active region and light and carriers are concentrated on the active region using the sidewall parts of the groove, wherein a current blocking layer is not formed, as a current path. CONSTITUTION:If forward voltage is impressed between an (n) electrode 8 and a (p)electrode 9, forward current crosses the p-n junction of the interface between a p-type alx Ga1-xAs active layer 5 and an n-type AlyGa1-yAs upper side clad layer 6 and flows between the both electrodes electrodes by the impression of voltage. At this time, by the action of a trapezoidal groove 2 provided on a p-type GaAs substrate crystal 1 and an n-type GaAs current blocking layer 3 grown discontinously at these sidewall parts, that is, by the existence of a p-n-p inverse bias layer, the flow of the current is limited to the sidewall parts only of the trapezoidal groove 2 and the current almost concentrates on the part approaching the trapezoidal groove 2, that is on an active region 10. By controlling the width and depth of the trapezoidal groove 2 and the thickness of the n-type GaAs current blocking layer 3 and a P-type AlyGa1-yAs lower side clad layer 4, the position of the active region 10 can be automatically aligned, and at the same time, the width can be also controlled. |
| 公开日期 | 1988-01-13 |
| 申请日期 | 1986-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO. Semiconductor laser device. JP1988007691A. 1988-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。