半導体レ-ザの製造方法
文献类型：专利
| 作者 | 岩野 英明 |
| 发表日期 | 1996-03-27 |
| 专利号 | JP1996031651B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To improve crystalline property and resistivity, by forming the current narrowing layer and a light confining layer of a II-VI compound semiconductor, by an MOCVD method, where organic zinc compound, which is an addition body of dialkylzinc and dialkylselenium, is used as a zinc source. CONSTITUTION:On an N-type GaAs single crystal substrate 301, the following layers are sequentially laminated by an organic-metal vapor-phase thermal decomposition (MOCVD) method: an N-type GaAs buffer layer 306; an N-type AlGaAs clad layer 305; a GaAs or AlGaAs active layer 304; a P-type AlGaAs clad layer 303; and a P-type GaAs contact layer 302. A stripe shaped rib is formed in a photolithography step. Then an addition body, which is formed by equal-mol mixing of dialkylzinc and dialkylselenium, is used as a Zn source, and a ZnSe layer 307 is embedded and grown by the MOCVD method. The ZnSe layer 307 on the rib is etched again by the photolithography step, and a P-type ohmic electrode 308 and an N-type ohmic electrode 309 are formed. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1986-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 岩野 英明. 半導体レ-ザの製造方法. JP1996031651B2. 1996-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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