Semiconductor laser device
文献类型：专利
| 作者 | MATSUDA MANABU |
| 发表日期 | 1991-03-11 |
| 专利号 | JP1991055891A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device oscillated in a TM mode by coupling a waveguide structure formed on a semiconductor substrate 1 to TE mode light reducing means. CONSTITUTION:A waveguide structure 3 formed on a semiconductor substrate 1 is formed in a structure bent at 90 degrees at the intermediate thereof, and composed, for example, of a material having higher refractive index than that of its periphery to form an obliquely incident reflection surface 7 at the bent part. The reflectivity of a TM mode light is increased as an incident angle thetafrom an incident angle '0' is increased, but the reflectivity of a TE mode light is initially decreased as the incident angle theta is increased, once becomes '0', and then abruptly increased. That is, the reflectivity of the TM mode light has much larger angle range than that of the TE mode light. The component of the reflected light R incident to and reflected on the surface 7 is strengthened in the TM mode. Accordingly, the TM mode light is controlled by repeating reflection on the surface 7 by reciprocating in the structure 3, thereby oscillating the TM mode. |
| 公开日期 | 1991-03-11 |
| 申请日期 | 1989-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81508]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MATSUDA MANABU. Semiconductor laser device. JP1991055891A. 1991-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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