Semiconductor light emitting device
文献类型：专利
| 作者 | OOSAKA SHIGEO |
| 发表日期 | 1985-10-26 |
| 专利号 | JP1985214578A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To provide a highly efficient and reliable high-power device furnished with an excellent reflection film structure capable of withstanding heavy duties by a method wherein one of the reflecting surfaces of an oscillator is coated with a first metal film which is further coated with a second metal film whose reflectivity is higher than that of the first metal film. CONSTITUTION:A first metal film 20 is a Ti film typically 100Angstrom thick formed on a dielectric film 19 by means of evaporation or sputtering. A second metal film 21 is formed, which is a 0.1-0.2mum-thick Au film attached to the first metal film 20. The first metal film 20 functions only to augment adhesion between the second metal film 21 and the dielectric film 19, and is composed of Ti, Ni, Cr, Mo, or W, with its thickness thin enough to cause but a sufficiently small optical loss. The second metal film 21 is the reflecting film, and is built of such a high-reflectivity metal as Al, Au, Ag, Cu, Pt, or the like. |
| 公开日期 | 1985-10-26 |
| 申请日期 | 1984-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO. Semiconductor light emitting device. JP1985214578A. 1985-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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